Structure combining an ic integrated substrate and a carrier, and method of manufacturing such structure

ABSTRACT

The present invention provides a structure combining an IC integrated substrate and a carrier, which comprises a carrier and an IC integrated substrate formed on the carrier. The IC integrated substrate has a first dielectric layer attached to the carrier. The materials of the carrier and the first dielectric layer are selected to prevent the IC integrated substrate from peeling off the carrier during processing and to allow the IC integrated substrate to naturally separate from the carrier after being cut, through the adhesion between the carrier and the first dielectric layer. The present invention also provides a method of manufacturing the above structure and a method of manufacturing electrical devices using the above structure.

BACKGROUND OF THE INVENTION

a) Field of the Invention

The invention relates to a structure combining an IC integratedsubstrate and a carrier, and a method of manufacturing such structure.

b) Description of the Related Art

As information, communication, and consumer electronic products aremoving in the trend of becoming lightweight, thin, short, compact, andmultifunctional, the line width, line spacing, and size of chips aregetting smaller and the chips require faster transmission speed. Inresponse thereto, better packaging technology for electricallyconnecting the chips to the exterior is required to increase the wiringdensity. Therefore, the chip packaging technology transformed fromthrough hole type to surface mount type, the lead frame went fromconnecting by gold wire to using bumps, and circuit boards started outfrom hard printed circuit boards (PCB) to flexible printed circuitboards (FPCB) and to multilayer thin-film substrates.

A typical six-layer PCB with BT material weighs about 4 grams and has athickness of about 1 mm, and thus cannot be bent. An FPCB with athickness of about 50 μm can only be made with two layers ofinterconnection. In contrast, a multilayer thin-film substrate with athickness of about 50 μm can have six layers of interconnection andweighs about 0.21 grams in total, and therefore the multilayer thin-filmsubstrate has the best flexibility and is the most compact. Moreover, inregard to the interconnection density, for PCB and FPCB, the minimumdiameter of through holes is 50 μm, the minimum dimension of throughhole bonding pads is 100 μm, and the minimum line width and line spacingis 25 μm, whereas for the multilayer thin-film substrate, the minimumdiameter of through holes is 20 μm, the minimum dimension of throughhole bonding pads is 25 μm, and the minimum line width and line spacingis 20 μm, and therefore the multilayer thin-film substrate greatlyincreases the interconnection density. The multilayer thin-filmsubstrate, due to its flexibility, is especially suitable for productsthat have special limitation in size or have a structure with bendingdesign.

In general, the aforementioned multilayer thin-film substrate is used asan IC packaging substrate, playing a conventional role of electricalsignal transmission and interface connection. With requirements of theelectronic products heading towards high functionality, high speedsignal transmission, and high density circuitries, the multilayerthin-film substrate technology has a larger room for growth because themultilayer thin-film substrate has semiconductor devices withfunctionalities like capacitance and resistance, and thereby can greatlyenhance its functionality. The semiconductor device is, for example,passive devices, driver ICs, and thin film transistors (TFT). This typeof high functionality multilayer thin-film substrate is referred to asIC integrated substrate hereafter.

In photoelectric, electronic, and semiconductor industries, as the ICintegrated substrate miniaturizes in size while it provides more andmore functions, the level of precision required of the IC integratedsubstrate also rises. The manufacturing process of IC integratedsubstrate thus faces new challenges, especially in how to increasecircuit density and/or how to combine different electronic devices toform a high functionality IC integrated substrate, both of which areimportant parts of industrial competitions. A key to manufacturing an ICintegrated substrate is the size stability of the IC integratedsubstrate in the manufacturing process. A conventional solution is tomanufacture the IC integrated substrate on a rigid carrier; in which thesize stability of the carrier is used to increase the size stability ofthe IC integrate substrate during processing. However, a major issue inusing this solution is the separation of the IC integrated substratefrom the carrier after the fabrication of the IC integrated substrate iscomplete.

In U.S. Pat. No. 4,480,288, a double-sided thin, flexible circuitry isformed on an aluminum carrier, and then the aluminum carrier is removedby hydrochloric acid. In addition, U.S. Pat. No. 4,812,191 discloses amethod of manufacturing a multilayer thin-film substrate comprising amultilayer interconnection structure by using a sacrificial substratetechnique. In the method, a multilayer interconnection structure isformed on a carrier that has a coefficient of thermal expansion lessthan that of the structure, and then the temperature is elevated toperform curing, after which the temperature is lowered to generatesufficient tension between the carrier and the multilayerinterconnection structure before the multilayer interconnectionstructure is separated from the carrier by adhering a support means tothe multi-layer interconnection structure and by an acid-etchingprocess.

U.S. Pat. No. 5,258,236 is about a method of separating a carrier and amultilayer thin-film substrate having a multilayer interconnectionstructure by laser ablation. Referring to FIG. 1, a polymer layer 2, ametal layer 3, and a multilayer interconnection structure 4 aresequentially formed on the transparent carrier 1. Ultraviolet light isthen applied to the polymer layer 2 through the transparent carrier 1 inorder to ablate the polymer 2, allowing the transparent carrier 1 to beseparated from the rest of the structure.

However, the aforementioned separation methods are tedious and complex.Thus, a manufacturing method that fabricates an IC integrated substratewith high size-precision and separates the IC integrated substrate and acarrier without increasing the production cost is much needed.

SUMMARY OF THE INVENTION

It is an object of the invention to provide a structure combining an ICintegrated substrate and a carrier, a method of manufacturing suchstructure, and a method of manufacturing electronic devices using suchstructure, wherein the IC integrated substrate separates from thecarrier in an easy, fast, and low-cost way.

A structure combining an IC integrated substrate and a carrier accordingto one embodiment of the invention comprises: a carrier; and an ICintegrated substrate formed on the carrier and having a first dielectriclayer attached to the carrier.

A method of manufacturing a structure combining an IC integratedsubstrate and a carrier according to another embodiment of the inventioncomprises the steps of: providing a carrier; and forming an ICintegrated substrate on the carrier, the IC integrated substrate havinga first dielectric layer attached to the carrier.

A method of manufacturing electronic devices according to anotherembodiment of the invention comprises the steps of: providing a carrier;forming an IC integrated substrate on the carrier, the IC integratedsubstrate having a first dielectric layer attached to the carrier; andcutting at least one piece from the IC integrated substrate, so thateach piece cut from the IC integrated substrate naturally separates fromthe carrier to form an electronic device.

In the aforementioned structure and manufacturing methods, the materialsof the carrier and the first dielectric layer can be selected to obtainan adhesion between the IC integrated substrate and the carrier, bywhich the IC integrated substrate is prevented from peeling off thecarrier during processing but naturally separates from the carrier aftera cutting process. In the invention, “natural separation” refers to theseparating of the IC integrated substrate and the carrier with no orlittle external force applied and without damaging their structures; thelittle external force is, for example, sticking by tape, clamping byfixtures, vacuum suction, or the alike.

Moreover, the IC integrated substrate mentioned in the invention isdifferent from the multilayer thin-film substrate used in conventionalpackaging process. The IC integrated substrate of the invention can havea multilayer interconnection structure for electrical connection, or atleast one semiconductor device such as passive devices, electronicdrivers, TFT devices, other electronic devices, or any combinationthereof.

With the technical means of the invention, the IC integrated substrateand the carrier can be separated, according to the invention, by aneasy, fast, and low-cost way in comparison to the conventionaltechnology wherein complex methods like solvent and laser are used toseparate a multilayer thin-film substrate and a carrier. An electronicdevice comprising a multilayer interconnection structure, at least onesemiconductor device, or a combination thereof is thus manufactured.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a conventional method of separating a carrier and anelectronic device by laser ablation.

FIG. 2 is a flow chart illustrating a method of manufacturing anelectronic device, including the manufacturing of a structure combininga carrier and an IC integrated substrate having a multilayerinterconnection structure, according to an embodiment of the invention.

FIG. 3 is a flow chart illustrating a method of manufacturing anelectronic device, including the manufacturing of a structure combininga carrier and an IC integrated substrate having a multilayerinterconnection structure, according to another embodiment of theinvention.

DETAILED DESCRIPTION OF THE INVENTION

The preferred embodiments of a structure combining an IC integratedsubstrate and a carrier and a method of manufacturing such structureaccording to the invention will be described in detail with reference tothe drawings, in which like reference numerals denote like elements.

FIG. 2 is a flow chart illustrating a method of manufacturing anelectronic device 6 according to an embodiment of the invention; theflow chart also includes the manufacturing of a structure 28 combiningan IC integrated substrate 8 and a carrier 10. The IC integratedsubstrate 8 shown in this embodiment has a multilayer interconnectionstructure and is a double-sided substrate, which means its front sideand backside are both electrically connected to the exterior. For thisdouble-sided substrate, the front side electrically connects to thebackside, but the multilayer interconnection structure may be of othertypes of interconnections such as interconnecting in multiple places onone surface, or in other conditions. Furthermore, the number of layersin the multilayer interconnection structure is not limited and can beadjusted according to different applications.

In Step S1 of this embodiment, the carrier 10 is an eight-inch siliconwafer, but obviously it can be a substrate or silicon wafer or the like,of any size.

Steps S2 to S4 of FIG. 2 are steps of forming on the carrier 10 the ICintegrated substrate 8 having a multilayer interconnection structure.First, a first dielectric layer 14 is formed on the carrier 10 in StepS2. Specifically, the first dielectric layer 14 of the IC integratedsubstrate 8, as shown in FIG. 2, is spin coated on the carrier 10without any adhesive treatment performed to the interface between thecarrier 10 and the first dielectric layer 14. Subsequently in Step S3and S4, metal layers 22, 24, and 26 and dielectric layers 16, 18, and 20are alternately, sequentially formed (in the order of 22, 16, 24, 18,26, 20) on the first dielectric layer 14 to form the IC integratedsubstrate 8 having a multilayer interconnection structure. And thus thestructure 28 combining the IC integrated substrate 8 and the carrier 10is manufactured.

In the aforementioned structure 28, the materials of the IC integratedsubstrate 8 and the carrier 10 are selected such that adhesion (withoutadhesion-enhancement) existing between the two prevents the ICintegrated substrate 8 from peeling off the carrier 10 due to the stressgenerated during processing and allows the IC integrated substrate 8 tonaturally separate from the carrier 10 at a cutting process (Step S5,which will be described later). For this embodiment and description ofother embodiments hereinafter, “natural separation” refers to theseparating of the IC integrated substrate and the carrier with no orlittle external force applied and without damaging their structures. Forexample, the two are said to be naturally separated if they can beseparated by sticking with tape, clamping with fixtures, vacuum suction,etc.

In addition, residual dielectric layer material 7 attached to the outerperiphery of the carrier 10 and the IC integrated substrate 8 also actsto fix and bond the two, the residual dielectric layer material 7 beingthe remaining material of dielectric materials on the edge of thecarrier 10 that are spin coated to form dielectric layers. According tothis embodiment, the dielectric layers 14, 16, 18, and 20 are polyimides(PI) (DuPont PI-2611) with low dielectric constants (less than 4) and athickness of 8 μm; the top metal layer 26 and the bottom metal layer 22are under bump metal (UBM) with Cr/Cu/Ni/Au structure for subsequentelectrical connection to solder balls; and the middle metal layer 24 ismultilayer metal wires of Cr/Cu/Cr. Each metal layer may be of acomposition other than the aforementioned metal layer and appropriatemetal layers can be selected for different applications.

Another embodiment of the invention includes performing anadhesion-diminishing treatment to the interface between the firstdielectric layer 14 and the carrier 10 before spin coating the firstdielectric layer 14 on the carrier 10 in Step S2 if the adhesion betweenthe two is strong. For example, if both the first dielectric layer 14and the carrier 10 are PIs, using a Silane-based material can weaken theinterfacial adhesion between the two. The dielectric layer 14 is thenspin coated on the carrier 10 thereafter. It is to be noted that whetherthe aforementioned adhesion-diminishing treatment is necessary and whichtreatment method to use can be determined based on the material selectedfor the first dielectric layer 14 and the carrier 10. The diminishedadhesion between the carrier 10 and the first dielectric layer 14 actsto prevent the first dielectric layer 14 from peeling off the carrier 10due to the stress generated during processing and to allow the firstdielectric layer 14 to naturally separate from the carrier 10 at acutting process (Step S5, which will be described later). In addition,the residual dielectric layer material 7 attached to the outer peripheryof the carrier 10 and the IC integrated substrate 8 fixes and bonds thetwo. More precisely, the aforementioned residual dielectric layermaterial 7 is the excess from materials on the edge of the carrier 10that are used to form a plurality of dielectric layers in the ICintegrated substrate 8 and, is left on the outer periphery of thecarrier 10 and the IC integrated substrate 8 when no edge-washing isperformed.

Moreover, an adhesion-enhancing treatment can be used to strengthen theadhesion between the aforementioned dielectric layers 14, 16, 18, and 20in the IC integrated substrate 8, respectively forming adhesion enhancedregions 15, 17, and 19 as shown in bold lines in FIG. 2. Theadhesion-enhancing treatment described herein and in embodimentshereafter can be achieved by using the surface characteristic ofdielectric layers or by increasing the surface energy, e.g. plasmatreating the dielectric layers with O₂ or Ar. Also, conductive throughholes, which penetrate dielectric layers 16 and 18, can be formed byetching or laser drilling the IC integrated substrate 8, therebyelectrically connecting the metal interconnections 22, 24, and 26.

Lastly, as shown in Step 5 in FIG. 2, at least one piece is cut from theIC integrated substrate 8 on the carrier 10 at appropriate places, andsince the adhesion between the IC integrated substrate 8 and the carrier10 is weak, each piece cut from the IC integrated substrate 8 naturallyseparates from the carrier 10 to form the electronic device 6 having amultilayer interconnection structure. For example, the two can be easilyseparated through vacuum suction, clamping with fixtures, or stickingwith tape. In comparison to the conventional technology wherein complexmethods like solvent and laser are used to separate a multilayerthin-film substrate from a carrier to form an electronic device, the ICintegrated substrate and the carrier in this embodiment are separatedwith this simple, fast, and low-cost method to manufacture a highsize-precision, thin, and flexible electronic device having a multilayerinterconnection structure. Moreover, after the cutting process,conductive through holes can be formed by etching or laser drillingholes through the top dielectric layer and the bottom dielectric layerof the electronic device 6, respectively, to establish electricalconnections to the exterior.

FIG. 3 is a flow chart illustrating a method of manufacturing anelectronic device 36, which includes the manufacturing of a structure 40combining an IC integrated substrate 38 and a carrier 30, according toanother embodiment of the invention. The IC integrated substrate 38 usedas an illustration in this embodiment includes at least onesemiconductor device 35; the semiconductor device can be passivedevices, electronic drivers, TFT devices, other electronic devices, orany combination thereof. It is to be noted that although FIG. 3 onlyillustrates an IC integrated substrate having a semiconductor, an ICintegrated substrate may include a large number of semiconductordevices, and even thousands of electronic devices may be fabricated bycutting the substrate in subsequent processes. The structure of the ICintegrated substrate is simplified herein for easy illustration anddescription purposes.

For this embodiment, an eight-inch silicon wafer is used as the carrier30 in Step S1′; however, obviously the carrier can be a substrate orsilicon wafer of any size.

Steps S2′ and S3′ shown in FIG. 3 are steps for forming the ICintegrated substrate 38 having at least one semiconductor device on thecarrier 30. First, a first dielectric layer 34 is formed on the carrierin Step 2′. More precisely, the forming step, in which the firstdielectric layer 34 of the IC integrated substrate 38 is spin coated onthe carrier 30, is carried out without any adhesive treatment.Subsequently, at least one semiconductor device 35 is formed on thefirst dielectric layer 34 in Step S3′ to form the IC integratedsubstrate 38. The materials of the carrier 30 and the first dielectriclayer 34 are selected to obtain an adhesion between the two whichprevents the IC integrated substrate 38 from peeling off the carrier 30due to the stress generated during processing and at the same timeallows the IC integrated substrate 38 to naturally separate from thecarrier 30 after a cutting process (Step S4′, which will be describedlater). In addition, residual dielectric layer material 37 (shown inbold wavy lines in FIG. 3) attached to the outer periphery of thecarrier 30 and the IC integrated substrate 38 acts to fix and bond thetwo, the residual dielectric layer material 37 being the dielectricmaterial on the edge of the carrier 30 that is used to form the firstdielectric layer 34. In this embodiment, the dielectric layer 34 is apolyimide (Dupont, PI-2611) with a low-dielectric constant (less than4).

In another embodiment of Step S2′, an adhesion-diminishing treatment isperformed before spin coating the first dielectric layer 34 on thecarrier 30 if the adhesion between the two is strong. For example, ifboth the first dielectric layer 34 and the carrier 30 are PIs, aSilane-based material can be used to reduce the interfacial adhesiontherebetween before spin coating the first dielectric layer 34 on thecarrier 30. It is to be noted that whether the adhesion-diminishingtreatment is necessary and which method should be used for the treatmentcan be determined based on the materials selected for the firstdielectric layer 34 and the carrier 30. The diminished adhesion betweenthe first dielectric layer 34 and the carrier 30 prevents the peeling ofthe IC integrated substrate 38 from the carrier 30 due to the stressgenerated during processing but allows natural separation of the ICintegrated substrate 38 and the carrier 30 at a cutting process (StepS4′, which will be described later). In addition, the residualdielectric layer material 37 attached to the outer periphery of thecarrier 30 and the first dielectric layer 34 fixes and bonds the two,and since the residual dielectric layer material 37 is the excess of thematerials on the edge of the carrier 30 that are used to from the firstdielectric layer 34, it remains at the outer periphery of the carrier 30and the IC integrated substrate 38 if no edge-washing is performed.

Moreover, the adhesion between the dielectric layer 34 and thesemiconductor device 35 can be strengthened by an adhesion-enhancingtreatment to form an adhesion-enhanced region 39 as shown in bold linein FIG. 3. Also, the IC integrated substrate 38 can be etched or laserdrilled, whereby the dielectric layer and the insulating layer of thesemiconductor device are penetrated to form conductive through holesthat can be used with metal interconnections to electrically connect thesemiconductor devices to one another or to electrically connect thesemiconductor device to the exterior.

Last, as shown in Step S4′ in FIG. 3, at least one piece is cut from theIC integrated substrate 38 on the carrier 30 at appropriate places,since the adhesion between the IC integrated substrate 38 and thecarrier is weak, each piece cut from the IC integrated substrate 38naturally separates from the carrier 30, forming the electronic device36. The separation method can be, for example, vacuum suction, clampingby fixtures, or sticking by tape. In comparison to the conventionaltechnology wherein complex methods like solvent and laser are used toseparate an IC integrated substrate from a carrier to form an electronicdevice, this embodiment uses this easy, fast, and low-cost method toachieve the separation, thereby manufacturing a high size-precision,thin, and flexible electronic device having at least one semiconductordevice.

It is to be noted that in the invention, the carrier can be any solidmaterial, including glass, ceramic, silicon wafer, sapphire substrate,gallium arsenide, polyimide, such as Kapton, PI-2611, or similarcommercial material, or metal, such as aluminum. The dielectric layermaterial can be any organic material, including polyimide, such asPI-2611, Durimide 9005, or similar commercial material,benzo-cyclobutene (BCB), such as Cyclotene 4024, polymethyl-methacrylate (PMMA), liquid crystal polymer (LCP), etc. Table 1illustrates sample combinations of adhesion-diminishing treatment anddifferent materials for carriers and dielectric layers used in theaforementioned embodiments. Table 2 illustrates sample combinations ofdifferent materials for carriers and dielectric layers in theaforementioned embodiments without adhesive treatment. It is to be notedthat these tables are for illustrative purpose.

TABLE 1 Combination of adhesion-diminishing treatment and materials forcarrier and dielectric layer Dielectric Adhesion-diminishing treatmentmethod Carrier material layer material Coating VM651 (Silane) PI-2611PI-2611 Cyclotene 4024 Durimide 9005 High-temperature oxidation Siliconwafer PI-2611 Cyclotene 4024 Surfactant Silicon wafer PI-2611 (Sodiumdodecylbenzenesulfonate) Glass Cyclotene 4024 Durimide 9005

TABLE 2 Combination of materials for carrier and dielectric layerwithout adhesive treatment Carrier material Dielectric layer materialSilicon wafer PI-2611 Cyclotene 4024 PI-2611 PI-2611 Cyclotene 4024Durimide 9005

Material Selection and Process

For the principle of selecting or processing materials of the carrierand dielectric layer to control adhesion as described in the invention,one is referred to the adhesion theory described in the following listeddocuments:

-   1. Berg, J. C., “Wettability” Marcel Dekker, Inc., New York, 1993.-   2. Fowkes, F. M., “Contact Angle, Wettability, and Adhesion”    American Chemical Society, Washington, D.C., 1964.-   3. Shiue, J. H., “The complete book of Adhesives”, Gaulih, Taipei,    1985.

The theory explains three criteria for adhesion: wetting,solidification, and sufficient deformation for reducing elastic pressureduring bonding, and by keeping these three principles in mind one canselect and control adhesion to get the effect needed by the invention;the three principles will be described in detail.

For wetting, one is referred to Cooper & Nuttall theory, wherein thecriteria for wetting the surface of a solid s with a liquid l is:

S=γ _(s)−γ_(l)−γ_(sl)

Wet: S>0

Not wet: S<0γ_(s)=The free energy of solid surface in saturated vapor atmosphereγ_(l)=The free energy of liquid surface in saturated vapor atmosphereγ_(sl)=The free energy of the solid/liquid interface

S=Initial spreading coefficient

The material of a dielectric layer formed by coating can be selectedbased on the wetting principle, where the final adhesion is strongerwhen the S value is larger and the final adhesion is weaker when the Svalue is smaller. Material selected based on the principle can achievethe adhesion result required by the invention, and as well, surfacetreatment can be used to suitably change free energy, or enhancing ordiminishing the adhesiveness of the layer, to achieve the adhesionresult required by the invention. Because the actual value of theadhesion is greatly affected by process quality, persons skilled in theart should understand that the principle is a qualitative result andthat the actual S value is not to be used for specific applications.However, by trial and error, a suitable adhesion between the carrier andthe dielectric layer in the invention can be obtained, and thus theeffect of natural separation as suggested by the invention can beachieved.

The wetting principle also applies to dielectric layers formed bynon-coating methods like lamination and cold forging because plasticflow would form at the microscopic contact points. And since theinvention must be solid, it naturally conforms to the solidificationprinciple.

Dielectric layers formed by non-coating methods also need to fullyconsider the deformation principle. If the contact surface cancompletely deform during processing, the adhesion would be stronger,otherwise it would be weaker. By appropriately utilizing theseprinciples, the natural separation effect of the invention can beachieved.

While the invention has been described by way of examples and in termsof the preferred embodiments, it is to be understood that the inventionis not limited to the disclosed embodiments. In other words, it isintended to include equivalent modifications and changes of the aboveembodiments without departing from the spirit and scope of the inventionas would be apparent to those skilled in the art. Therefore, the scopeof the appended claims should be accorded the broadest interpretation soas to encompass all such equivalent modifications and changes.

1. A structure combining an IC integrated substrate and a carrier,comprising: a carrier; and an IC integrated substrate formed on thecarrier, the IC integrated substrate having a first dielectric layerattached to the carrier; wherein the materials of the carrier and the ICintegrated substrate are selected such that, through adhesion betweenthe carrier and the IC integrated substrate, the IC integrated substratedoes not peel off from the carrier during processing but naturallyseparates therefrom after being cut.
 2. The structure combining an ICintegrated substrate and a carrier as described in claim 1, wherein noadhesive treatment is performed to the interface between the carrier andthe first dielectric layer.
 3. The structure combining an IC integratedsubstrate and a carrier as described in claim 1, wherein anadhesion-diminishing treatment is performed to the interface between thecarrier and the first dielectric layer.
 4. The structure combining an ICintegrated substrate and a carrier as described in claim 1, wherein theIC integrated substrate comprises a multilayer interconnection structurecomprising: at least one dielectric layer, which comprises the firstdielectric layer; and at least one metal layer; wherein the at least onedielectric layer and the at least one metal layer are alternately formedon the carrier.
 5. The structure combining an IC integrated substrateand a carrier as described in claim 4, wherein adhesion-enhanced regionsare respectively formed between adjacent dielectric layers of themultilayer interconnection structure by an adhesion-enhancing treatment.6. The structure combining an IC integrated substrate and a carrier asdescribed in claim 1, wherein the IC integrated substrate furthercomprises: at least one semiconductor device formed on the firstdielectric layer.
 7. The structure combining an IC integrated substrateand a carrier as described in claim 6, wherein an adhesion-enhancedregion is formed between the first dielectric layer and the at least onesemiconductor device by an adhesion-enhancing treatment.
 8. A method ofmanufacturing a structure combining an IC integrated substrate and acarrier, comprising: providing a carrier; and forming an IC integratedsubstrate on the carrier, the IC integrated substrate having a firstdielectric layer attached to the carrier; wherein the materials of thecarrier and the first dielectric layer are selected such that, throughadhesion between the carrier and the first dielectric layer, the ICintegrated substrate does not peel off from the carrier duringprocessing but naturally separates therefrom after being cut.
 9. Themethod of manufacturing a structure combining an IC integrated substrateand a carrier as described in claim 8, wherein no adhesive treatment isperformed to the interface between the carrier and the first dielectriclayer.
 10. The method of manufacturing a structure combining an ICintegrated substrate and a carrier as described in claim 8, furthercomprising: performing an adhesion-diminishing treatment to theinterface between the carrier and the first dielectric layer.
 11. Themethod of manufacturing a structure combining an IC integrated substrateand a carrier as described in claim 8, wherein the IC integratedsubstrate comprises a multilayer interconnection structure, and the stepof forming the IC integrated substrate comprises: forming at lest onedielectric layer, which comprises the first dielectric layer; andforming at least one metal layer; wherein the at least one dielectriclayer and the at least one metal layer are alternately formed on thecarrier.
 12. The method of manufacturing a structure combining an ICintegrated substrate and a carrier as described in claim 11, wherein thestep of forming the IC integrated substrate further comprises:performing an adhesion-enhancing treatment to the interface betweenadjacent dielectric layers of the multilayer interconnection structure.13. The method of manufacturing a structure combining an IC integratedsubstrate and a carrier as described in claim 8, wherein the step offorming the IC integrated substrate comprises: forming the firstdielectric layer on the carrier; and forming at least one semiconductordevice on the first dielectric layer.
 14. The method of manufacturing astructure combining an IC integrated substrate and a carrier asdescribed in claim 13, wherein the step of forming the IC integratedsubstrate further comprises: performing an adhesion-enhancing treatmentto the interface between the first dielectric layer and the at least onesemiconductor device.
 15. A method of manufacturing electronic devices,comprising: providing a carrier; forming an IC integrated substrate onthe carrier, the IC integrated substrate having a first dielectric layerattached to the carrier; and cutting at least one piece from the ICintegrated substrate, so that each piece cut from the IC integratedsubstrate naturally separates from the carrier to form an electronicdevice; wherein the materials of the carrier and the first dielectriclayer are selected such that, through adhesion between the carrier andthe first dielectric layer, the IC integrated substrate does not peeloff from the carrier during processing but naturally separates therefromafter being cut.
 16. The method of manufacturing electronic devices asdescribed in claim 15, wherein the IC integrated substrate being cutnaturally separates from the carrier by sticking with tape, clampingwith fixtures, or vacuum suction.
 17. The method of manufacturingelectronic devices as described in claim 15, wherein no adhesivetreatment is performed to the interface between the carrier and thefirst dielectric layer.
 18. The method of manufacturing electronicdevices as described in claim 15, further comprising: performing anadhesion-diminishing treatment to the interface between the carrier andthe first dielectric layer.
 19. The method of manufacturing electronicdevices as described in claim 15, wherein the IC integrated substratecomprises a multilayer interconnection structure, and the step offorming an IC integrated substrate comprises: forming at least onedielectric layer, which comprises the first dielectric layer; andforming at least one metal layer; wherein the at least one dielectriclayer and the at least one metal layer are alternately formed on thecarrier.
 20. The method of manufacturing electronic devices as describedin claim 19, wherein the step of forming an IC integrated substratefurther comprises: performing an adhesion-enhancing treatment to theinterface between adjacent dielectric layers of the multilayerinterconnection structure.
 21. The method of manufacturing electronicdevices as described in claim 15, wherein the step of forming an ICintegrated substrate comprises: forming the first dielectric layer onthe carrier; and forming at least one semiconductor device on the firstdielectric layer.
 22. The method of manufacturing electronic devices asdescribed in claim 21, wherein the step of forming an IC integratedsubstrate further comprises: performing an adhesion-enhancing treatmentto the interface between the first dielectric layer and the at least onesemiconductor device.